Beta
⌘K
IR MOSFET™ N-CHANNEL ; SO-8 PACKAGE; 9 MOHM;
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs(th) (Max) @ Id | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 30 V | 59 nC | Surface Mount | 8-SO | MOSFET (Metal Oxide) | 14 A | 8 mOhm | 2410 pF | N-Channel | -55 °C | 150 °C | 10 V | 16 V | 4 V | 2.5 W |