
HIP2210 Series
Manufacturer: Renesas Electronics Corporation
100V, 3A SOURCE, 4A SINK, HIGH FREQUENCY HALF-BRIDGE DRIVERS WITH TRI-LEVEL PWM INPUT AND ADJUSTABLE DEAD TIME
| Part | Number of Drivers | Input Type | Package Name | Package Length | Package Width | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Driven Configuration | Gate Channel | Gate Type | Operating Temperature (Max) | Operating Temperature (Min) | Package / Case | High Side Voltage - Max (Bootstrap) | Fall Time (Typ) | Rise Time (Typ) | Current - Peak Output (Source) | Current - Peak Output (Sink) | Mounting Type | Logic Voltage - VIH | Logic Voltage - VIL | Channel Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 2 | Non-Inverting | 10-TDFN | 4 mm | 4 mm | 18 V | 6 V | Half-Bridge | N-Channel | MOSFET N-Channel MOSFET | 125 °C | -40 °C | 10-WDFN Exposed Pad | 115 V | 365 ns | 435 ns | 3 A | 4 A | Surface Mount | 1.84 V | 1.47 V | Synchronous |
Renesas Electronics Corporation | 2 | Non-Inverting | 10-TDFN | 4 mm | 4 mm | 18 V | 6 V | Half-Bridge | N-Channel | MOSFET | 125 °C | -40 °C | 10-WDFN Exposed Pad | 115 V | 20 ns | 20 ns | 3 A | 4 A | Surface Mount | 1.84 V | 1.47 V | Synchronous |
Renesas Electronics Corporation | 2 | Non-Inverting | 10-TDFN | 4 mm | 4 mm | 18 V | 6 V | Half-Bridge | N-Channel | MOSFET N-Channel MOSFET | 125 °C | -40 °C | 10-WDFN Exposed Pad | 115 V | 365 ns | 435 ns | 3 A | 4 A | Surface Mount | 1.84 V | 1.47 V | Synchronous |