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DMP2066UFDE Series

NRND = Not Recommended for New Design

Manufacturer: Diodes Inc

Catalog

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMP2066LDMQ-7	1.2 V	20 V	820 pF	10.1 nC	SOT-26	Surface Mount	4.6 A	12 V	-55 °C	150 °C	2.5 V 4.5 V	40 mOhm	1.25 W	MOSFET (Metal Oxide)	P-Channel	SOT-23-6
Diodes Inc DMP2066LVT-13	1.5 V	20 V	1496 pF	14.4 nC	TSOT-23-6	Surface Mount	4.5 A	8 V	-55 °C	150 °C	2.5 V 4.5 V	45 mOhm	1.2 W	MOSFET (Metal Oxide)	P-Channel	SOT-23-6 Thin TSOT-23-6
Diodes Inc DMP2066UFDE-7	1.1 V	20 V	1537 pF	14.4 nC	U-DFN2020-6 (Type E)	Surface Mount	6.2 A	12 V	-55 °C	150 °C	1.8 V 4.5 V	36 mOhm	660 mW	MOSFET (Metal Oxide)	P-Channel	6-PowerUDFN
Diodes Inc DMP2066LSN-7	1.2 V	20 V	820 pF	10.1 nC	SC-59-3	Surface Mount	4.6 A	12 V	-55 °C	150 °C	2.5 V 4.5 V	40 mOhm	1.25 W	MOSFET (Metal Oxide)	P-Channel	SC-59 SOT-23-3 TO-236-3
Diodes Inc DMP2066LVT-7	1.5 V	20 V	2990 pF		SOT-26	Surface Mount	4.5 A	8 V	-55 °C	150 °C	2.5 V 4.5 V	45 mOhm	1.2 W	MOSFET (Metal Oxide)	P-Channel	SOT-23-6	25 nC
Diodes Inc DMP2066LDM-7	1.2 V	20 V	820 pF	10.1 nC	SOT-26	Surface Mount	4.6 A	12 V	-55 °C	150 °C	2.5 V 4.5 V	40 mOhm	1.25 W	MOSFET (Metal Oxide)	P-Channel	SOT-23-6