MUR20060 Series

Catalog

DIODE MODULE GP 600V 100A 2TOWER

Part	Voltage - Forward (Vf) (Max)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Diode Pair Count	Diode Configuration	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Current - Reverse Leakage	Package / Case	Technology	Package Name	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)
GeneSiC Semiconductor MUR20060CTR	1.7 V	150 °C	-55 °C	1 pair	Common Anode	Chassis Mount	600 V	25 µA	Twin Tower	Standard	Twin Tower	110 ns	100 A	500 ns	200 mA
GeneSiC Semiconductor MUR20060CT	1.7 V	150 °C	-55 °C	1 pair	Common Cathode	Chassis Mount	600 V	25 µA	Twin Tower	Standard	Twin Tower	110 ns	100 A	500 ns	200 mA
GeneSiC Semiconductor MUR20060CT	1.7 V	150 °C	-55 °C	1 pair	Common Cathode	Chassis Mount	600 V	25 µA	Twin Tower	Standard	Twin Tower	110 ns	100 A	500 ns	200 mA
GeneSiC Semiconductor MUR20060CTR	1.7 V	150 °C	-55 °C	1 pair	Common Anode	Chassis Mount	600 V	25 µA	Twin Tower	Standard	Twin Tower	110 ns	100 A	500 ns	200 mA