DIODE GEN PURP 800V 3A DO214AB
| Part | Technology | Package / Case | Current - Reverse Leakage @ Vr | Speed | Capacitance @ Vr, F | Current - Average Rectified (Io) | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Standard | DO-214AB SMC | 10 µA | 200 mA 500 ns | 50 pF | 3 A | Surface Mount | 1.7 V | 800 V | 75 ns | 150 °C | -55 °C | DO-214AB (SMC) | |
Taiwan Semiconductor Corporation | Standard | DO-214AA SMB | 10 µA | 200 mA 500 ns | 50 pF | 3 A | Surface Mount | 1.7 V | 800 V | 75 ns | 150 °C | -55 °C | DO-214AA | SMB |
Taiwan Semiconductor Corporation | Standard | DO-214AB SMC | 10 µA | 200 mA 500 ns | 50 pF | 3 A | Surface Mount | 1.7 V | 800 V | 75 ns | 150 °C | -55 °C | DO-214AB (SMC) |