TRANS PREBIAS NPN 50V 0.1A SMINI
| Part | Frequency - Transition | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Resistor - Base (R1) | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Current - Collector Cutoff (Max) [Max] | Resistor - Emitter Base (R2) | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 250 MHz | 50 V | SC-59 SOT-23-3 TO-236-3 | 200 mW | 100 mA | 4.7 kOhms | S-Mini | 300 mV | 50 | Surface Mount | 500 nA | 10 kOhms | NPN - Pre-Biased |