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60 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, P-channel Trench MOSFET
60 V, P-channel Trench MOSFET
| Part | Package / Case | Package Name | FET Type | Vgs (Max) | Gate Charge (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Rds On (Max) | Technology | Grade | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Mounting Type | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | SC-100 SOT-669 | LFPAK56 Power-SO8 | P-Channel | 20 V | 30 nC | 10 V | 4.5 V | 61 mOhm | MOSFET (Metal Oxide) | Automotive | 25 A 25 A | -55 °C | 175 °C | 1060 pF | 66 W | 60 V | 3 V | Surface Mount | AEC-Q101 |