BSZ0901 Series

Catalog

OPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 2 MOHM;

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies BSZ0901NSATMA1	45 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	2 mOhm	22 A 40 A	Surface Mount	2.1 W 50 W	20 V	8-PowerTDFN	30 V	2.2 V	PG-TSDSON-8	4.5 V 10 V	2850 pF	N-Channel
Infineon Technologies BSZ0901NSIATMA1	41 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	2.1 mOhm	25 A 40 A	Surface Mount	2.1 W 69 W	20 V	8-PowerTDFN	30 V	2.2 V		4.5 V 10 V		N-Channel	Schottky Diode (Body)	2600 pF