MOSFET N-CH 30V 8.5A 8SOIC
| Part | Power Dissipation (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [x] | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs | Technology | Mounting Type | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 2.5 W | 20 V | 650 pF | 20 nC | 8-SOIC | 30 V | N-Channel | 22 mOhm | MOSFET (Metal Oxide) | Surface Mount | 2.3 V | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | 8.5 A | 4.5 V 10 V | |
Alpha & Omega Semiconductor Inc. | 3.1 W | 20 V | 1420 pF | 8-SOIC | 30 V | N-Channel | 9 mOhm | MOSFET (Metal Oxide) | Surface Mount | 2.25 V | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | 14.5 A | 4.5 V 10 V | 32 nC |