IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 9.5 MOHM;
| Part | Drain to Source Voltage (Vdss) | Package / Case | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 80 V | DirectFET™ Isometric MN | DIRECTFET™ MN | 10 V | 150 °C | -40 °C | 4.9 V | 2.8 W 89 W | 9.5 mOhm | 2060 pF | N-Channel | 50 nC | Surface Mount | 20 V | MOSFET (Metal Oxide) |