Beta
⌘K
IR MOSFET™ P-CHANNEL ; DPAK TO-252 PACKAGE; 580 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs | FET Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Rds On (Max) @ Id, Vgs | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 66 nC | P-Channel | TO-252AA (DPAK) | 13 A | 860 pF | Surface Mount | 295 mOhm | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 110 W | 20 V | 4 V | 150 V | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 |