DMG7430LFGQ Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Grade	Power Dissipation (Max) [Max]	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMG7430LFGQ-13	Surface Mount	20 V	26.7 nC	11 mOhm	AEC-Q101	4.5 V 10 V	2.5 V	Automotive	900 mW	8-PowerVDFN	30 V	-55 °C	150 °C	N-Channel	10.5 A	MOSFET (Metal Oxide)	POWERDI3333-8	1281 pF

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(on)– Ensures On-State Losses Are Minimized

• 100% Unclamped Inductive Switching, Test in Production – Ensures More Reliable And Robust End Application

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMG7430LFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, power-management functions, and DC-DC converters.