DMHC4035LSDQ Series

40V Complementary Enhancement Mode MOSFET H-Bridge

Catalog

40V Complementary Enhancement Mode MOSFET H-Bridge

Part	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Qualification	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Grade	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power - Max [Max]	Vgs(th) (Max) @ Id	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type
Diodes Inc DMHC4035LSDQ-13	-55 °C	150 °C	2 N and 2 P-Channel (Full Bridge)	AEC-Q101	3.7 A 4.5 A	574 pF 587 pF	Automotive	45 mOhm 65 mOhm	8-SOIC	1.5 W	3 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	12.5 nC	11.1 nC	40 V	Surface Mount
Diodes Inc DMHC4035LSD-13	-55 °C	150 °C	2 N and 2 P-Channel (Full Bridge)		3.7 A 4.5 A	574 pF 587 pF		45 mOhm 65 mOhm	8-SO	1.5 W	3 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	12.5 nC	11.1 nC	40 V	Surface Mount

40V Complementary Enhancement Mode MOSFET H-Bridge

• 2 x N + 2 x P channels in a SOIC package

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

This new generation complementary MOSFET H-Bridge features 2 N and 2 P channel in an SOIC package.