NVMFS3D6N10MCL Series

Single N-Channel Power MOSFET 100 V, 131 A, 3.6mΩ

Catalog

Single N-Channel Power MOSFET 100 V, 131 A, 3.6mΩ

Part	Mounting Type	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Grade	Gate Charge (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Rds On (Max)	Package Leads	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Vgs(th) (Max)	Qualification	Package Length	Package Width	FET Type	Input Capacitance (Ciss) (Max)
ON Semiconductor NVMFS3D6N10MCLT1G	Surface Mount	19 A	132 A	Automotive	60 nC	3 W 139 W	100 V	10 V	4.5 V	MOSFET (Metal Oxide)	3.6 mOhm	5 Leads	5-DFN 8-PowerTDFN 8-SOFL	-55 °C	175 °C	20 V	3 V	AEC-Q101	5 mm	6 mm	N-Channel	4411 pF
ON Semiconductor NVMFWS3D6N10MCLT1G	Surface Mount	20 A	132 A	Automotive	60 nC	3.2 W 139 W	100 V	10 V	4.5 V	MOSFET (Metal Oxide)	3.6 mOhm	5 Leads	5-DFN 8-PowerTDFN 8-SOFL	-55 °C	175 °C	20 V	3 V	AEC-Q101	5 mm	6 mm	N-Channel	4411 pF

Catalog

Single N-Channel Power MOSFET 100 V, 131 A, 3.6mΩ

Key Features

• Small Footprint (5x6 mm)

• Low RDS (ON)

• Low QGand Capacitance

• Wettable Flank Option available

• RoHS Compliant

• AEC−Q101 Qualified and PPAP Capable

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.