TRANS 2PNP PREBIAS 0.2W US6
| Part | Transistor Type | Package / Case | Resistor - Emitter Base (R2) | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Mounting Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Frequency - Transition | Current - Collector (Ic) (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2 PNP - Pre-Biased (Dual) | 6-TSSOP SC-88 SOT-363 | 10 kOhms | 50 V | US6 | Surface Mount | 50 | 500 nA | 200 mW | 200 MHz | 100 mA | 300 mV | ||
Toshiba Semiconductor and Storage | 2 PNP - Pre-Biased (Dual) | 6-TSSOP SC-88 SOT-363 | 10 kOhms | 50 V | US6 | Surface Mount | 50 | 500 nA | 200 mW | 200 MHz | 100 mA | 300 mV | AEC-Q101 | Automotive |
Toshiba Semiconductor and Storage | 2 PNP - Pre-Biased (Dual) | 6-TSSOP SC-88 SOT-363 | 10 kOhms | 50 V | US6 | Surface Mount | 50 | 500 nA | 200 mW | 200 MHz | 100 mA | 300 mV | ||
Toshiba Semiconductor and Storage | 2 PNP - Pre-Biased (Dual) | SOT-563 SOT-666 | 10 kOhms | 50 V | ES6 | Surface Mount | 50 | 100 nA | 100 mW | 200 MHz | 100 mA | 300 mV |