DMG1016UDW Series

Complementary Pair Enhancement Mode MOSFET

Catalog

Complementary Pair Enhancement Mode MOSFET

Part	Power - Max [Max]	Technology	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Configuration	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMG1016UDW-7	330 mW	MOSFET (Metal Oxide)	Logic Level Gate	-55 °C	150 °C	450 mOhm	20 V	Surface Mount	1.07 A	845 mA	0.74 nC	1 V	6-TSSOP SC-88 SOT-363	SOT-363	N and P-Channel
Diodes Inc DMG1016VQ-7	530 mW	MOSFET (Metal Oxide)	Logic Level Gate	-55 °C	150 °C	400 mOhm	20 V	Surface Mount	640 mA 870 mA		0.74 nC	1 V	SOT-563 SOT-666	SOT-563	N and P-Channel	60.67 pF
Diodes Inc DMG1016VQ-13	530 mW	MOSFET (Metal Oxide)	Logic Level Gate	-55 °C	150 °C	400 mOhm	20 V	Surface Mount	640 mA 870 mA		0.74 nC	1 V	SOT-563 SOT-666	SOT-563	N and P-Channel	60.67 pF

Catalog

Complementary Pair Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Gate Threshold Voltage VGS(th)<1V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

Description

This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.