PSMN5 Series
Manufacturer: NXP USA Inc.
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MOSFET N-CH 100V 67.5A TO220F
| Part | Gate Charge (Max) | Technology | Package / Case | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Package Name | Vgs (Max) | FET Type | Current - Continuous Drain (Id) (Tc) | Drain to Source Voltage (Vdss) | Rds On (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Width | Package Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | 153 nC | MOSFET (Metal Oxide) | Isolated Tab TO-220-3 Full Pack | 9900 pF | 4 V | TO-220F | 20 V | N-Channel | 67.5 A | 100 V | 5 mOhm | Through Hole | 10 V | 63.8 W | ||||||
 NXP USA Inc. | 21.3 nC | MOSFET (Metal Oxide) | SC-100 SOT-669 | 1226 pF | 2.15 V | LFPAK56 Power-SO8 | 20 V | N-Channel | 78 A | 30 V | 6.1 mOhm | Surface Mount | 63 W | -55 °C | 175 °C | 10 V | 4.5 V | |||
 NXP USA Inc. | 24 nC 24 nC | MOSFET (Metal Oxide) | 8-VDFN Exposed Pad | 1316 pF | 2.15 V | 8-DFN3333 | 20 V | N-Channel | 40 A | 30 V | 5.8 mOhm | Surface Mount | 55 W | -55 °C | 150 °C | 10 V | 4.5 V | 3.3 mm | 3.3 mm |