IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 26 MOHM;
| Part | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 26 mOhm | D2PAK | MOSFET (Metal Oxide) | N-Channel | -40 C | 175 °C | 10 V | 62 A | 330 W | 200 V | 5 V | 30 V | 98 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4600 pF | Surface Mount |