IC FRAM 4MBIT SPI 50MHZ 8DFN
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Memory Format | Supplier Device Package | Clock Frequency | Memory Interface | Technology | Memory Type | Package / Case | Memory Size | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Organization | Package / Case [y] | Package / Case [x] | Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Fujitsu Semiconductor Memory Solution MB85RS4MTYPN-G-AWEWE1 | -40 °C | 125 °C | Surface Mount | FRAM | 8-DFN (5x6) | 50 MHz | SPI | FRAM (Ferroelectric RAM) | Non-Volatile | 8-VDFN Exposed Pad | 512 kb | 3.6 V | 1.8 V | 512 K | |||
Fujitsu Semiconductor Memory Solution MB85RS4MLYPF-G-BCERE1 | -40 °C | 125 °C | Surface Mount | FRAM | 8-SOP | 50 MHz | SPI | FRAM (Ferroelectric RAM) | Non-Volatile | 8-SOIC | 512 kb | 1.95 V | 1.7 V | 512 K | 5.3 mm | 0.209 " | |
Fujitsu Semiconductor Memory Solution MB85RS4MTYPF-G-BCERE1 | -40 °C | 125 °C | Surface Mount | FRAM | 8-SOP | 50 MHz | SPI | FRAM (Ferroelectric RAM) | Non-Volatile | 8-SOIC | 512 kb | 3.6 V | 1.8 V | 512 K | 5.3 mm | 0.209 " | |
Fujitsu Semiconductor Memory Solution MB85RS4MTYPN-GS-AWEWE1 | -40 °C | 125 °C | Surface Mount | FRAM | 8-DFN (5x6) | 50 MHz | SPI | FRAM (Ferroelectric RAM) | Non-Volatile | 8-VDFN Exposed Pad | 512 kb | 3.6 V | 1.8 V | 512 K | 9 ns | ||
Fujitsu Semiconductor Memory Solution MB85RS4MLYPN-GS-AWEWE1 | -40 °C | 125 °C | Surface Mount | FRAM | 8-DFN (5x6) | 50 MHz | SPI | FRAM (Ferroelectric RAM) | Non-Volatile | 8-VDFN Exposed Pad | 512 kb | 1.95 V | 1.7 V | 512 K | 9 ns |