
Catalog
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
Description
AI
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
| Part | Mounting Type | Input Capacitance (Ciss) (Max) | Power - Max | FET Feature | Qualification | Rds On (Max) | Gate Charge (Max) | Grade | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Package Name | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) | Configuration | Current - Continuous Drain (Id) (Typical) | Current - Continuous Drain (Id) (Maximum) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Surface Mount | 83 pF | 280 mW | Logic Level Gate | AEC-Q100 | 380 mOhm | 0.68 nC | Automotive | -55 °C | 150 °C | 6-TSSOP SC-88 SOT-363 | 6-TSSOP | 20 V | MOSFET (Metal Oxide) | 1.3 V | N P-Channel | 725 mA | 500 mA |