DUAL MOSFET, DUAL N CHANNEL, 8 A, 30 V, 0.0125 OHM, 10 V, 2 V ROHS COMPLIANT: YES
| Part | FET Feature | Configuration | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Mounting Type | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Logic Level Gate | 2 N-Channel (Dual) | 15 mOhm | 30 V | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 17 nC | 1300 pF | 8 A | 1.4 W | Surface Mount | MOSFET (Metal Oxide) | 2 V | ||
Infineon Technologies | 2 N-Channel (Dual) | 30 V | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 15 nC | 7.6 A | 1.4 W | Surface Mount | MOSFET (Metal Oxide) | 2 V | 15 mOhm | 1890 pF |