MOSFET 2P-CH 20V 4.7A 8TSSOP
| Part | Mounting Type | Power - Max [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case [custom] | Package / Case [custom] | FET Feature | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | 1 W | MOSFET (Metal Oxide) | 4.7 A | 1700 pF | 8-TSSOP | 0.173 " | 4.4 mm | Logic Level Gate | 1.2 V | -55 °C | 150 °C | 2 P-Channel | 20 V | 39 nC | 30 mOhm | 8-TSSOP |
Infineon Technologies | Surface Mount | 1 W | MOSFET (Metal Oxide) | 4.7 A | 1700 pF | 8-TSSOP | 0.173 " | 4.4 mm | Logic Level Gate | 1.2 V | -55 °C | 150 °C | 2 P-Channel | 20 V | 39 nC | 30 mOhm | 8-TSSOP |