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1200V/120mohm SiC MOSFET TO-247-3L
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Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package.
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1200V/120mohm SiC MOSFET TO-247-3L
1200V/120mohm SiC MOSFET TO-247-3L
| Part | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Current - Continuous Drain (Id) (Tc) | Vgs(th) (Max) | Vgs (Max) Negative | Vgs (Max) Positive | Technology | Drain to Source Voltage (Vdss) | Rds On (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Package Name | Mounting Type | Power Dissipation (Max) | Package Leads |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 LITTELFUSE | 870 pF 890 pF | -55 °C | 150 °C 175 °C | 50 nC 57 nC | 20 A 22 A | 4 V | -6 V | 22 V | SiCFET (Silicon Carbide) | 1200 V | 200 mOhm | 20 V | TO-247-3 | N-Channel | TO-247AD | Through Hole | 125 W | |
 LITTELFUSE | 39 A | SiCFET (Silicon Carbide) | 1200 V | N-Channel | D2PAK TO-263-7 | Surface Mount | 7 Leads | |||||||||||
LITTELFUSE | 1125 pF | -55 °C | 150 °C | 80 nC | 27 A | 4 V | -6 V | 22 V | SiCFET (Silicon Carbide) | 1200 V | 150 mOhm | 20 V | TO-247-3 | N-Channel | TO-247AD | Through Hole | 139 W | |
 LITTELFUSE | 1700 pF 1825 pF | -55 °C -55 °C | 150 °C 175 °C | 92 nC 92 nC 95 nC | 39 A | 4 V | -6 V | 22 V | SiCFET (Silicon Carbide) | 1200 V | 100 mOhm | 20 V | TO-247-3 | N-Channel | TO-247AD | Through Hole | 179 W 214 W |