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20 V, single P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, single P-channel Trench MOSFET
20 V, single P-channel Trench MOSFET
| Part | Gate Charge (Max) | Rds On (Max) | Technology | Package / Case | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | FET Type | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1.9 nC | 450 mOhm | MOSFET (Metal Oxide) | 3-XFDFN | 3.125 W 360 mW | -55 °C | 150 °C | 4.5 V | 1.8 V | P-Channel | 950 mV | 20 V | Surface Mount | 8 V | 127 pF | 1 A | DFN1006B-3 |