Beta
⌘K
P-CHANNEL MOSFETS IN LOGIC LEVEL, REDUCING DESIGN COMPLEXITY IN MEDIUM AND LOW POWER APPLICATIONS
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Package / Case | Rds On (Max) @ Id, Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | Mounting Type | Technology | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 175 ░C | 188 W | 8-PowerTDFN | 24 mOhm | PG-TDSON-8 FL | 4400 pF | 59 A | 20 V | 2 V | Surface Mount | MOSFET (Metal Oxide) | P-Channel | 4.5 V 10 V | 60 V | 136 nC |