IC FLASH
| Part | Technology | Memory Format | Memory Organization | Access Time | Memory Interface | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Package / Case | Voltage - Supply [Min] | Voltage - Supply [Max] | Write Cycle Time - Word, Page | Supplier Device Package | Memory Type | Memory Size | Package / Case [y] | Package / Case [y] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited GD9FU8G8E4DMGI | FLASH - NAND | FLASH | |||||||||||||||
GigaDevice Semiconductor (HK) Limited GD9FU8G8E3ALGI | FLASH - NAND (SLC) | FLASH | 1 G | 18 ns | ONFI | 85 °C | -40 °C | Surface Mount | 63-VFBGA | 2.7 V | 3.6 V | 20 ns | 63-FBGA (9x11) | Non-Volatile | 1024 KB | ||
GigaDevice Semiconductor (HK) Limited GD9FU8G8E2AMGI | FLASH - NAND (SLC) | FLASH | 1 G | 18 ns | ONFI | 85 °C | -40 °C | Surface Mount | 48-TFSOP | 2.7 V | 3.6 V | 20 ns | 48-TSOP I | Non-Volatile | 1024 KB | 18.4 mm | 0.724 in |
GigaDevice Semiconductor (HK) Limited GD9FU8G8E4DLGI | FLASH - NAND | FLASH | |||||||||||||||
GigaDevice Semiconductor (HK) Limited GD9FU8G8E3AMGI | FLASH - NAND (SLC) | FLASH | 1 G | 18 ns | ONFI | 85 °C | -40 °C | Surface Mount | 48-TFSOP | 2.7 V | 3.6 V | 20 ns | 48-TSOP I | Non-Volatile | 1024 KB | 18.4 mm | 0.724 in |