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GANFET N-CH 650V 6.5A 3PQFN
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Package / Case | FET Type | Drain to Source Voltage (Vdss) | Technology | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Transphorm | -55 °C | 150 °C | 21 W | 760 pF | 9.6 nC | 3-PowerDFN | N-Channel | 650 V | GaNFET (Gallium Nitride) | 3-PQFN (8x8) | 8 V | 6.5 A | 312 mOhm | Surface Mount | 18 V | 2.6 V |