GD25S512 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 512MBIT SPI/QUAD 8WSON
| Part | Memory Type | Memory Size | Package / Case | Mounting Type | Memory Depth | Memory Width | Technology | Package Width | Package Name | Package Length | Access Time | Operating Temperature (Max) | Operating Temperature (Min) | Memory Interface (Type) | Memory Format | Write Cycle Time - Word | Write Cycle Time - Page | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Clock Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 Mb | 8-WDFN Exposed Pad | Surface Mount | 64 M | 8 bit | FLASH - NOR (SLC) | 8 | 8-WSON | 6 | 7 ns | 125 °C | -40 °C | SPI - Quad I/O | FLASH | 60 µs | 2.5 ms | 3.6 V | 2.7 V | 104 MHz |
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 Mb | 8-WDFN Exposed Pad | Surface Mount | 64 M | 8 bit | FLASH - NOR | 8 | 8-WSON | 6 | 85 °C | -40 °C | SPI - Quad I/O | FLASH | 50 µs | 2.4 ms | 3.6 V | 2.7 V | 104 MHz | |
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 Mb | 24-TBGA | Surface Mount | 64 M | 8 bit | FLASH - NOR | 8 mm | 24-TFBGA | 6 mm | 85 °C | -40 °C | SPI - Quad I/O | FLASH | 50 µs | 2.4 ms | 3.6 V | 2.7 V | 104 MHz |