DIODE SIL CARB 600V 8A TO220-2-2
| Part | Technology | Supplier Device Package | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Capacitance @ Vr, F | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | SiC (Silicon Carbide) Schottky | PG-TO220-2-2 | 70 µA | 8 A | 600 V | No Recovery Time | Through Hole | 175 ░C | -55 C | TO-220-2 | 240 pF | 0 ns |
Infineon Technologies | SiC (Silicon Carbide) Schottky | PG-TO220-2-1 | 70 µA | 8 A | 600 V | No Recovery Time | Through Hole | 175 ░C | -55 C | TO-220-2 | 240 pF | 0 ns |