Catalog
650V, 15A, SMD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
Beta
⌘K
650V, 15A, SMD, Silicon-carbide (SiC) SBD
650V, 15A, SMD, Silicon-carbide (SiC) SBD
| Part | Voltage - DC Reverse (Vr) (Max) | Capacitance | Current - Average Rectified (Io) | Operating Temperature - Junction | Technology | Current - Reverse Leakage | Package Name | Reverse Recovery Time (trr) | Package / Case | Mounting Type | Voltage - Forward (Vf) (Max) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 650 V | 550 pF | 15 A | 175 °C | SiC (Silicon Carbide) Schottky | 300 µA | TO-263L | 0 ns | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 1.5 V | 500 mA | No Recovery Time | 500 mA 500 mA |