MOSFET P-CH 100V 6.6A DPAK
| Part | Drain to Source Voltage (Vdss) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 100 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 27 nC | TO-252AA (DPAK) | 480 mOhm | 40 W | Surface Mount | 10 V | 4 V | P-Channel | -55 °C | 150 °C | 20 V | 6.6 A | 350 pF | MOSFET (Metal Oxide) |
Infineon Technologies | 100 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 27 nC | TO-252AA (DPAK) | 480 mOhm | 40 W | Surface Mount | 10 V | 4 V | P-Channel | -55 °C | 150 °C | 20 V | 6.6 A | 350 pF | MOSFET (Metal Oxide) |
Infineon Technologies | 100 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 27 nC | TO-252AA (DPAK) | 480 mOhm | 40 W | Surface Mount | 10 V | 4 V | P-Channel | -55 °C | 150 °C | 20 V | 6.6 A | 350 pF | MOSFET (Metal Oxide) |
Infineon Technologies | 100 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 27 nC | TO-252AA (DPAK) | 480 mOhm | Surface Mount | 10 V | 4 V | P-Channel | -55 °C | 150 °C | 20 V | 6.6 A | 350 pF | MOSFET (Metal Oxide) | |
Infineon Technologies | 100 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 27 nC | TO-252AA (DPAK) | 480 mOhm | 40 W | Surface Mount | 10 V | 4 V | P-Channel | -55 °C | 150 °C | 20 V | 6.6 A | 350 pF | MOSFET (Metal Oxide) |