TRANS PREBIAS NPN 50V SMINI
| Part | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Mounting Type | Resistor - Base (R1) | Package / Case | Frequency - Transition | Current - Collector Cutoff (Max) [Max] | Transistor Type | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 300 mV | 50 V | 120 | S-Mini | Surface Mount | 4.7 kOhms | SC-59 SOT-23-3 TO-236-3 | 250 MHz | 100 nA | NPN - Pre-Biased | 200 mW | 100 mA |