POWER MOSFET, HEXFET®, N CHANNEL, 150 V, 33 A, 0.034 OHM, TO-252 (DPAK), SURFACE MOUNT
| Part | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-252AA (DPAK) | 1750 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 26 nC | N-Channel | MOSFET (Metal Oxide) | 10 V | 20 V | Surface Mount | 5 V | 33 A | -55 °C | 175 ░C | 42 mOhm | 144 W | 150 V |