PSMN4R3 Series

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Catalog

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Part	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package Name	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Technology	Mounting Type	Rds On (Max)	Gate Charge (Max)	FET Type	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Nexperia USA Inc. PSMN4R3-40MSHX	3.6 V	95 A	-55 °C	175 °C	10 V	8-LFPAK33 (5-Lead) SOT-1210	LFPAK33	40 V	20 V	2338 pF	MOSFET (Metal Oxide)	Surface Mount	4.3 mOhm	32 nC	N-Channel	90 W
Nexperia USA Inc. PSMN4R3-80PS,127	4 V	120 A	-55 °C	175 °C	10 V	TO-220-3	TO-220AB	80 V	20 V	8161 pF	MOSFET (Metal Oxide)	Through Hole	4.3 mOhm	111 nC	N-Channel	306 W
Nexperia USA Inc. PSMN4R3-40MLHX	2.15 V	95 A	-55 °C	175 °C		8-LFPAK33 (5-Lead) SOT-1210	LFPAK33	40 V	20 V	3007 pF	MOSFET (Metal Oxide)	Surface Mount	4.3 mOhm	43 nC	N-Channel	90 W	10 V	4.5 V
Nexperia USA Inc. PSMN4R3-30BL,118	2.15 V	100 A	-55 °C	175 °C		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	30 V	20 V	2400 pF	MOSFET (Metal Oxide)	Surface Mount	4.1 mOhm	41.5 nC	N-Channel	103 W	10 V	4.5 V
Nexperia USA Inc. PSMN4R3-30PL,127	2.15 V	100 A	-55 °C	175 °C		TO-220-3	TO-220AB	30 V	20 V	2400 pF	MOSFET (Metal Oxide)	Through Hole	4.3 mOhm	41.5 nC	N-Channel	103 W	10 V	4.5 V
Nexperia USA Inc. PSMN4R3-100PS,127	4 V	120 A	-55 °C	175 °C	10 V	TO-220-3	TO-220AB	100 V	20 V	9900 pF	MOSFET (Metal Oxide)	Through Hole	4.3 mOhm	170 nC	N-Channel	338 W

Catalog

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Description

95 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.