TP0604 Series

Catalog

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 2.0 OHM

Part	Rds On (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tj)	Mounting Type	Package / Case	Technology	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	FET Type
Microchip Technology TP0606N3-G-P002	3.5 Ohm	2.4 V	-55 °C	150 °C	TO-92-3	60 V	1 W	320 mA	Through Hole	TO-226-3 TO-92-3 (TO-226AA)	MOSFET (Metal Oxide)	150 pF	10 V	5 V	20 V	P-Channel
Microchip Technology TP0604N3-G	2 Ohm	2.4 V	-55 °C	150 °C	TO-92-3	40 V	740 mW	430 mA	Through Hole	TO-226-3 TO-92-3 (TO-226AA)	MOSFET (Metal Oxide)	150 pF	10 V	5 V	20 V	P-Channel
Microchip Technology TP0606N3-G	3.5 Ohm	2.4 V	-55 °C	150 °C	TO-92-3	60 V	1 W	320 mA	Through Hole	TO-226-3 TO-92-3 (TO-226AA)	MOSFET (Metal Oxide)	150 pF	10 V	5 V	20 V	P-Channel
Microchip Technology TP0606N3-G-P003	3.5 Ohm	2.4 V	-55 °C	150 °C	TO-92-3	60 V	1 W	320 mA	Through Hole	TO-226-3 TO-92-3 (TO-226AA)	MOSFET (Metal Oxide)	150 pF	10 V	5 V	20 V	P-Channel