IPB60R120 Series

Catalog

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 120 MOHM;

Part	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs
Infineon Technologies IPB60R120P7ATMA1	Surface Mount	600 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	36 nC	N-Channel	4 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	95 W	120 mOhm	1544 pF	26 A
Infineon Technologies IPB60R120C7ATMA1	Surface Mount	600 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	34 nC	N-Channel	4 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	92 W		1500 pF	19 A	PG-TO263-3-2	120 mOhm