Beta
⌘K
ISZ230N10NM6 OPTIMOS™ 6 100V IN NORMAL LEVEL IS SETTING THE NEW TECHNOLOGY STANDARD IN THE FIELD OF DISCRETE POWER MOSFETS.
| Part | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 9.3 nC | 8 V 10 V | 3.3 V | Surface Mount | PG-TSDSON-8 FL | 690 pF | 8-PowerTDFN | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 7.7 A 31 A | 23 mOhm | 100 V | 20 V | N-Channel |