DMP3018SFVQ Series

30V P-Channel Enhancement Mode MOSFET

Catalog

30V P-Channel Enhancement Mode MOSFET

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMP3018SFVQ-13	8-PowerVDFN	2147 pF	12 mOhm	30 V	PowerDI3333-8 (Type UX)	3 V	4.5 V 10 V	11 A 35 A	MOSFET (Metal Oxide)	Surface Mount	1 W	51 nC	P-Channel	-55 °C	150 °C	25 V
Diodes Inc DMP3018SFK-13	6-PowerUDFN	4414 pF		30 V	U-DFN2523-6	3 V	4.5 V 10 V	10.2 A	MOSFET (Metal Oxide)	Surface Mount	1 W	90 nC	P-Channel	-55 °C	150 °C	25 V	14.5 mOhm
Diodes Inc DMP3018SFK-7	6-PowerUDFN	4414 pF		30 V	U-DFN2523-6	3 V	4.5 V 10 V	10.2 A	MOSFET (Metal Oxide)	Surface Mount	1 W	90 nC	P-Channel	-55 °C	150 °C	25 V	14.5 mOhm

Catalog

30V P-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (Test in Production) – Ensures More Reliable and Robust End Application

• Low RDS(ON) – ensures on-state losses are minimized

• Small form factor thermally efficient package enables higher density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Capable

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.