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MOSFET N-CH 60V 50A TO252-3
| Part | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | Package / Case | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Power Dissipation (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO252-3 | 1900 pF | 60 V | 50 A | 20 V | 4 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 14.4 mOhm | -55 °C | 175 ░C | Surface Mount | 136 W | N-Channel | 10 V | MOSFET (Metal Oxide) | 54 nC |