N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK
| Part | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Current - Continuous Drain (Id) (Tc) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs (Max) | Package Name | Rds On (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 10 V | Through Hole | 100 A | 4 V | 8061 pF | N-Channel | -55 °C | 175 °C | TO-220-3 | 141 nC | 100 V | 306 W | 20 V | TO-220AB | 5.6 mOhm 5.6 mOhm | MOSFET (Metal Oxide) |
Nexperia USA Inc. | 10 V | Surface Mount | 100 A | 4 V | 8061 pF | N-Channel | -55 °C | 175 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 141 nC | 100 V | 306 W | 20 V | D2PAK | 5.6 mOhm 5.6 mOhm | MOSFET (Metal Oxide) |