MOSFET 2P-CH 55V 3.4A 8SO
| Part | Configuration | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Feature | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Power - Max [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 P-Channel | MOSFET (Metal Oxide) | -55 °C | 150 °C | 3.4 A | 690 pF | 8-SO | 55 V | 38 nC | Logic Level Gate | 105 mOhm | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 2 W | 1 V |