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MOSFET N-CH 560V 7.6A TO220-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Mounting Type | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 150 °C | 20 V | 83 W | 3.9 V | Through Hole | N-Channel | 10 V | MOSFET (Metal Oxide) | 7.6 A | PG-TO220-3-1 | TO-220-3 | 32 nC | 750 pF | 560 V | 600 mOhm |