Beta
⌘K
POWER MOSFET, N CHANNEL, 75 V, 120 A, 0.0058 OHM, TO-220AB, THROUGH HOLE
| Part | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Mounting Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 230 W | 4750 pF | TO-220-3 | Through Hole | 5.8 mOhm | 110 nC | 10 V | -55 °C | 175 ░C | 4 V | TO-220AB | MOSFET (Metal Oxide) | 75 V | 120 A | N-Channel | 20 V | ||
Infineon Technologies | 5150 pF | TO-220-3 | Through Hole | 6.3 mOhm | 10 V | -55 °C | 175 ░C | 4 V | TO-220AB | MOSFET (Metal Oxide) | 75 V | 130 A | N-Channel | 20 V | 180 nC | 200 W |