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IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 10.8 MOHM;
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Configuration | Package / Case | Package / Case [y] | Package / Case [x] | Power - Max [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C [Max] | Current - Continuous Drain (Id) @ 25°C [Min] | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 910 pF | 16.2 mOhm | MOSFET (Metal Oxide) | 30 V | 2 N-Channel (Half Bridge) | 8-SOIC | 3.9 mm | 0.154 in | 1.4 W 2 W | Surface Mount | 11 nC | 8-SO | 2.25 V | 11 A | 7.6 A | -55 °C | 150 °C | Logic Level Gate |