MOSFET N-CH 600V 9A TO220
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Mounting Type | Technology | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4 V | 10 V | N-Channel | Through Hole | MOSFET (Metal Oxide) | 22 W | 555 pF | TO-220-3 Full Pack | PG-TO220-FP | 13 nC | 9 A | 360 mOhm | 20 V | 600 V | 150 °C | -40 °C | ||
Infineon Technologies | 4.5 V | 10 V | N-Channel | Through Hole | MOSFET (Metal Oxide) | 679 pF | TO-220-3 Full Pack | PG-TO220 Full Pack | 5 A | 360 mOhm | 20 V | 650 V | 150 °C | -55 °C | 14 nC | 23 W |