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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Vgs (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Current - Continuous Drain (Id) (Tc) | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Name | Rds On (Max) | Input Capacitance (Ciss) (Max) | Qualification | FET Type | Power Dissipation (Max) | Package / Case | Mounting Type | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | -55 °C | 175 °C | 2.7 V | 20 V | 30 V | 110 nC | 82 A | MOSFET (Metal Oxide) | 10 V | 4.5 V | MLPAK33 | 8.2 mOhm | 3800 pF | AEC-Q101 | P-Channel | 94 W | 8-PowerVDFN | Surface Mount Wettable Flank | Automotive |