
MIC4452 Series
Manufacturer: Microchip Technology
IC GATE DRVR LOW-SIDE 8SOIC
| Part | Gate Type | Number of Drivers | Package Length | Package Name | Package Width | Operating Temperature (Max) | Operating Temperature (Min) | Driven Configuration | Gate Channel | Channel Type | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Logic Voltage - VIH | Logic Voltage - VIL | Rise Time (Typ) | Fall Time (Typ) | Current - Peak Output (Source) | Current - Peak Output (Sink) | Mounting Type | Input Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 1 | 0.154 in | 8-SOIC | 3.9 mm | 85 °C | -40 °C | Low-Side | N-Channel | Single | 18 V | 4.5 V | 2.4 V | 0.8 V | 20 ns | 24 ns | 12 A | 12 A | Surface Mount | Non-Inverting | |
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 1 | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 85 °C | -40 °C | Low-Side | N-Channel | Single | 18 V | 4.5 V | 2.4 V | 0.8 V | 20 ns | 24 ns | 12 A | 12 A | Through Hole | Non-Inverting | |
Microchip Technology | IGBT MOSFET | 1 | 0.154 in | 8-SOIC | 3.9 mm | 125 °C | -40 °C | Low-Side | N-Channel | Single | 18 V | 4.5 V | 2.4 V | 0.8 V | 20 ns | 24 ns | 12 A | 12 A | Surface Mount | Non-Inverting | |
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 1 | 0.154 in | 8-SOIC | 3.9 mm | 85 °C | -40 °C | Low-Side | N-Channel | Single | 18 V | 4.5 V | 2.4 V | 0.8 V | 20 ns | 24 ns | 12 A | 12 A | Surface Mount | Non-Inverting | |
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 1 | TO-220-5 | 70 °C | 0 °C | Low-Side | N-Channel | Single | 18 V | 4.5 V | 2.4 V | 0.8 V | 20 ns | 24 ns | 12 A | 12 A | Through Hole | Non-Inverting | TO-220-5 | ||
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 1 | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 85 °C | -40 °C | Low-Side | N-Channel | Single | 18 V | 4.5 V | 2.4 V | 0.8 V | 20 ns | 24 ns | 12 A | 12 A | Through Hole | Non-Inverting | |
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 1 | 0.154 in | 8-SOIC | 3.9 mm | 85 °C | -40 °C | Low-Side | N-Channel | Single | 18 V | 4.5 V | 2.4 V | 0.8 V | 20 ns | 24 ns | 12 A | 12 A | Surface Mount | Non-Inverting | |
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 1 | 0.154 in | 8-SOIC | 3.9 mm | 85 °C | -40 °C | Low-Side | N-Channel | Single | 18 V | 4.5 V | 2.4 V | 0.8 V | 20 ns | 24 ns | 12 A | 12 A | Surface Mount | Non-Inverting | |
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 1 | TO-220-5 | 70 °C | 0 °C | Low-Side | N-Channel | Single | 18 V | 4.5 V | 2.4 V | 0.8 V | 20 ns | 24 ns | 12 A | 12 A | Through Hole | Non-Inverting | TO-220-5 | ||
Microchip Technology | IGBT MOSFET N-Channel MOSFET | 1 | 0.154 in | 8-SOIC | 3.9 mm | 125 °C | -40 °C | Low-Side | N-Channel | Single | 18 V | 4.5 V | 2.4 V | 0.8 V | 20 ns | 24 ns | 12 A | 12 A | Surface Mount | Non-Inverting |