30V Complementary Pair Enhancement Mode MOSFET
30V Complementary Pair Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) @ 25°C [Min] | Current - Continuous Drain (Id) @ 25°C [Max] | Technology | FET Feature | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 13.2 nC | 3 V | 8-SOIC | 3.9 mm | 0.154 in | 27 mOhm | -55 °C | 150 °C | N and P-Channel | 1.2 W | 641 pF | 8-SO | 30 V | Surface Mount | 5.5 A | 5.8 A | MOSFET (Metal Oxide) | |||
Diodes Inc | 10.5 nC | 3 V | 8-SOIC | 3.9 mm | 0.154 in | 28 mOhm | -55 °C | 150 °C | N and P-Channel | 1.8 W | 8-SO | 30 V | Surface Mount | MOSFET (Metal Oxide) | Logic Level Gate | 472 pF | 6.6 A 6.8 A |