DMTH61M8SPSQ Series

60V +175°C N-Channel Enhancement Mode MOSFET

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Part	Grade	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Qualification	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Diodes Inc DMTH61M8SPSQ-13	Automotive	Surface Mount	3.2 W 167 W	20 V	10 V	1.6 mOhm	MOSFET (Metal Oxide)	130.6 nC	60 V	4 V	PowerDI5060-8 (Type K)	8-PowerTDFN	AEC-Q101	215 A	-55 °C	175 ░C	N-Channel

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low RDS(ON) – Minimizes On State Losses

• Low Input Capacitance

• Fast Switching Speed

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH61M8SPSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.