MOSFET N-CH 60V 90A TO220-3
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Technology | Package / Case | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Grade | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Vgs(th) (Max) @ Id | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 4 mOhm | 150 W | MOSFET (Metal Oxide) | TO-220-3 | 60 V | PG-TO220-3-1 | 10400 pF | Automotive | 128 nC | -55 °C | 175 ░C | 10 V | 90 A | N-Channel | Through Hole | 4 V | AEC-Q101 |
Infineon Technologies | 16 V | 150 W | MOSFET (Metal Oxide) | TO-220-3 | 60 V | PG-TO220-3-1 | 13000 pF | Automotive | 170 nC | -55 °C | 175 ░C | 4.5 V 10 V | 90 A | N-Channel | Through Hole | 2.2 V | AEC-Q101 | |
Infineon Technologies | 16 V | 150 W | MOSFET (Metal Oxide) | TO-220-3 | 60 V | PG-TO220-3-1 | 13000 pF | Automotive | 170 nC | -55 °C | 175 ░C | 4.5 V 10 V | 90 A | N-Channel | Through Hole | 2.2 V | AEC-Q101 |